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| www..com LTO-DMS MBR10100CT thru MBR10200CT 10 Amp HT Power Schottky Barrier Rectifier 100 Volts to 200Volts Features * High Junction Temperature Capability * Low Leakage Current and Low Forward Voltage Drop * Low Power Loss and High Efficiency Maximum Ratings * Operating Junction Temperature: 150C * Storage Temperature: - 55 C to +175C * Per diode Thermal Resistance 2.2C/W Junction to Case Mechanical Data * Case: Molded Plastic * Terminals: Plated Lead Solderable per MIL-STD-202, Method 208 * Marking:Type Number * Weight: 2.24 grams (approx) LTO-DMS Semiconductor Corporatin 1468, 86th Street, Brooklyn New York, 11228, USA Tel: (718) 234 6010 / (707) 3223 4679 Fax:(718) 234 6013 / (707) 3223 6696 TO-220AB DIMENSIONS DIM A B C D E F G H I J K L M N INCHES MIN 0.570 0.380 0.100 0.235 0.335 0.110 0.500 0.095 0.025 0.016 0.142 0.160 0.045 0.102 typ MAX 0.620. 0.405 0.120 0.255 0.365 0.155 0.562 0.105 0.035 0.025 0.147 0.190 0.055 MM MIN 14.4 9.66 2.54 5.97 8.51 2.80 12.7 2.42 0.64 0.41 3.61 4.06 1.14 2.6 typ MAX 15.75 10.28 3.04 6.48 9.27 3.93 14.27 2.66 0.89 0.64 3.37 4.82 1.39 NOTE Symbol Characteristics MBR10100CT MBR10150CT MBR10200CT Unit VRRM VRM VR(RMS) VF IF(AV) IFSM dv/dt Maximum Recurrent Peak Reverse Voltage Maximum DC Blocking Voltage Maximum RMS Voltage Maximum Forward Voltage (Note 1) IF=10A @TJ=25C Average Forward Current 8.3ms Single Half-Sine-Wave Peak Forward Surge Current Voltage Rate Of Change (Rated VR) Maximum DC at Reverse DC TJ=25C TJ=125C 100 100 70 0.85 150 150 105 200 200 140 0.95 V V V V A A V/us 10 150 10000 0.2 40 2.0 170 -55to+150 -55to+175 IR RthJC CJ TJ TSTG Current Rated mA C/ W pF C C Blocking Voltage Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. Revision: 1 2002/06/17 |
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